Effect of layer size on lattice distortion in strained-layer superlattices

Abstract
The accommodation of lattice mismatch in strained‐layer GaAs‐InxGa1−xAs (x≊0.27) superlattices grown by metalorganic chemical vapor deposition has been examined as a function of layer thickness using transmission electron microscopy. The degree of distortion from cubic is shown to be dependent on the layer thickness and at sufficiently large layer sizes (≳180 Å) dislocations are introduced at the interfaces.