Creep of SiC-Whisker reinforced Si3N4
- 1 January 1988
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 23 (3), 239-249
- https://doi.org/10.1051/rphysap:01988002303023900
Abstract
The mechanical behaviour of a composite of Si3N4 (with 3 % MgO) containing 0-20 % SiC whiskers has been investigated by compressive creep experiments (100-300 MPa) at temperatures between 1 250 °C and 1 500 °C. No significant influence of the SiC whiskers on the creep behaviour could be detected up to about 5 % of strain. Two temperature regions could be identified : a) at high temperature the creep deformation occurs at a quasiconstant strain rate. Extended cavitation in the triple junctions occurs. b) At low temperatures, creep rates rapidly decrease due to a strain hardening coefficient much more important than for higher temperatures. In the microstructure, cavities and microcracks along grain boundaries and fiber-matrix interfaces were observed. Dislocations play an insignificant role for the deformation in both temperatures regionsKeywords
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