Stimulated emission of GaAs-Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor deposition
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1), 136-138
- https://doi.org/10.1063/1.94579
Abstract
Well correlated stimulated and spontaneous emission peaks corresponding to electronic transitions from the n=1 and 2 subbands of the conduction band to the corresponding states in the valence band of GaAs‐Al0.6Ga0.4As multiple quantum well structure grown by metalorganic chemical vapor deposition were observed. No evidence of phonon‐assisted transitions was seen in any of our samples.Keywords
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