The thermal annealing of heavy ion damage in copper
- 1 June 1966
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 13 (126), 1105-1111
- https://doi.org/10.1080/14786436608213525
Abstract
Dislocation loops and three-dimensional vacancy clusters are created by 150 kev Zn + bombardment. The number of vacancies in them after successive isochronal anneals is measured by electron microscopy. At 200°c annealing is thought to take place by interstitial absorption. Thereafter, dislocation loops anneal with an activation energy close to that of self-diffusion, and clusters with an energy of about 1.3 ev.Keywords
This publication has 7 references indexed in Scilit:
- Vacancy clusters and loops in ion bombarded copperProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966
- On diffraction contrast from inclusionsPhilosophical Magazine, 1963
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963
- Direct observations of the annealing of prismatic dislocation loops and of climb of dislocations in quenched aluminiumPhilosophical Magazine, 1960
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958
- Theoretical Treatment of the Kinetics of Diffusion-Limited ReactionsPhysical Review B, 1957
- Radially symmetric phase growth controlled by diffusionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1950