Improved high-temperature performance of 1.52 (μm InGaAsP laser diodes fabricated by two-step VPE and LPE
- 1 January 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (7), 293-295
- https://doi.org/10.1049/el:19850210
Abstract
Continuous-wave operation up to 115°C has been achieved in 1.52 μm InGaAsP double-channel planar-buried-heterostructure laser diodes using two-step VPE and LPE. The high-temperature operation has been found attributable to the reduction in the leakage current bypassing the active region.This publication has 1 reference indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978