Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning tunneling microscopy

Abstract

We report results, from scanning tunneling microscopy, on the initial phase of oxygen adsorption on $p$-type GaAs(110) surfaces. High-resolution measurements show that atomic oxygen is bonded in an interchain bridging position. The results on $p$-type material show no evidence for band bending and are in marked contrast to previous results observed on $n$-type GaAs(110) surfaces.