Direct Observation of the Oxidation of Aluminum Single-Crystal Surfaces
- 1 March 1963
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (3), 619-628
- https://doi.org/10.1063/1.1729318
Abstract
A new technique has been developed by which naturally and anodically formed aluminum oxide produced on single‐crystal specimens has been studied in the electron microscope. The low‐temperature amorphous oxide grown by the transport of cations was smooth at the metal‐oxide interface. However, the oxide‐oxygen interface exhibited topography on certain crystal orientations. A high‐temperature crystalline oxide was found to grow by the transport of anions. Epitaxial growth was observed on several orientations. The anisotropy of oxide thickness which occurred at elevated temperatures is discussed. The above results are considered in terms of the structure of the metal‐oxide interface.Keywords
This publication has 5 references indexed in Scilit:
- Aluminum Reactions with Water Vapor, Dry Oxygen, Moist Oxygen, and Moist Hydrogen between 500° and 625°CJournal of the Electrochemical Society, 1960
- Natural and Thermally Formed Oxide Films on AluminumJournal of the Electrochemical Society, 1956
- Oxidation of Aluminum in the Temperature Range 400°–600°CJournal of the Electrochemical Society, 1956
- Some crystal-boundary phenomena in metalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949
- Thin Oxide Films on Aluminum.The Journal of Physical Chemistry, 1947