LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process

Abstract

It was found that GaAs melt can be purified in-situ by our new method of bubbling distillation technique. The degree of the purification can be detected by the measurement of the electric conductivity of the melt. With this technique homogeneouse undoped semi-insulating 2 inches in diameter GaAs single crystals can be grown with high reproducibility.