Integrated GaAs-AlGaAs double-heterostructure lasers
- 15 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (4), 241-243
- https://doi.org/10.1063/1.88408
Abstract
Integrated structures consisting of a double‐heterostructure GaAs‐AlGaAs etched‐mesa Fabry‐Perot laser coupled to a high‐purity GaAs waveguide have been fabricated and tested. Room‐temperature threshold current densities as low as 7.5 kA/cm2 for 1‐μm‐thick active layers were measured.Keywords
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