Some properties of metal/insulator/semiconductor structures with BN and carbon thin layers formed by the reactive pulse plasma method on silicon or SiO2 substrates and annealing effects
- 1 September 1986
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 142 (2), 269-277
- https://doi.org/10.1016/0040-6090(86)90011-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Basic properties of metal/insulator/semiconductor structures containing borazone and diamond layers produced by the reactive pulse plasma methodThin Solid Films, 1983
- Bonding in hydrogenated hard carbon studied by optical spectroscopySolid State Communications, 1983
- Hard carbon coatings with low optical absorptionApplied Physics Letters, 1983
- Reactive pulse plasma crystallization of diamond and diamond-like carbonJournal of Crystal Growth, 1979
- Preparation and Properties of Thin Film Boron NitrideJournal of the Electrochemical Society, 1968