Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)
- 15 April 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (8), 3303-3309
- https://doi.org/10.1103/physrevb.17.3303
Abstract
We have determined the surface structure of GaAs(110) by comparing our experimental low-energy-electron-diffraction (LEED) data with curves calculated by the combined space method. We find that the best agreement between theory and experiment is obtained for a structure in which the As atoms are tilted outward and the Ga atoms are tilted inward, with an angle of rotation of 27° and a Ga to second-layer spacing of 1.452 Å. For this structure the As back bond is contracted by about 5%. These findings are compared with previous results from LEED and surface-band-structure calculations.Keywords
This publication has 15 references indexed in Scilit:
- Unified computation scheme of low-energy electron diffraction—the combined-space methodPhysical Review B, 1977
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InPJournal of Vacuum Science and Technology, 1976
- Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductorsJournal of Vacuum Science and Technology, 1976
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976
- Photoemission studies of surface and interface states on III–V compoundsJournal of Vacuum Science and Technology, 1976
- Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAsPhysical Review Letters, 1975
- Work function variations of gallium arsenide cleaved single crystalsSurface Science, 1975
- Relationship of Surface-State Band Structure to Surface Atomic Configuration of Zinc Blende (110)Physical Review B, 1970
- Low-Energy Electron-Diffraction Study of the Cleaved (110) Surfaces of InSb, InAs, GaAs, and GaSbJournal of Applied Physics, 1964