TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices

Abstract

The role of diffusion barriers in the contact metallurgy of silicon semiconductor devices is to prevent silicon diffusion into the top layer of the metallization. It is shown that TiN and TaN are good diffusion barriers in metallization schemes which consist of a silicide layer for contact to the silicon and a top layer of nickel for soldering purposes. With these diffusion barriers, the contacts are stable under annealing up to 600 °C.