Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm

Abstract

Room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 mA for a 17 μm wide oxide-defined stripe laser.