Microscopic Compound Formation at the Pd-Si(111) Interface
- 10 December 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (24), 1836-1839
- https://doi.org/10.1103/PhysRevLett.43.1836
Abstract
Photoemission studies of Pd on clean Si(111) surfaces show that formation of the Si compound dominates the microscopic chemistry and properties of the Pd-Si interface. No evidence is found for interface dipoles or occupied metal-induced interface states in this system. The Si reaction product (a metal) has an electronic structure more like that of the noble metals than the transition metals, with an occupied band located ∼2.75 eV below the Fermi energy.
Keywords
This publication has 16 references indexed in Scilit:
- Chemically Induced Charge Redistribution at Al-GaAs InterfacesPhysical Review Letters, 1979
- Chemical reactions and local charge redistribution at metal-CdS and CdSe interfacesPhysical Review B, 1978
- Application of Auger electron spectroscopy to studies of the silicon/silicide interfaceJournal of Vacuum Science and Technology, 1978
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bendingPhysical Review B, 1976
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- Photoemission Observations of ResonantLevels and-Band Formation for Very Thin Overlayers of Cu and Pd on AgPhysical Review Letters, 1973
- Photoemission Experiments on Ag(Pd), Ag(Mn), and Cu(Mn) AlloysJournal of Applied Physics, 1969
- Some Notes on the Palladium-Silicon System.Acta Chemica Scandinavica, 1966
- Surface states on clean siliconSurface Science, 1964