Preparation and characterization of some AIBIICV type semiconductors
- 4 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14), 1150-1151
- https://doi.org/10.1063/1.99188
Abstract
Crystals of LiZnP, LiCdP, and LiZnAs are prepared by direct fusion of constituent elements. All three materials are found to be p‐type semiconductors. Absorption edge and photoconductivity spectra are measured. Band gaps are estimated to be 1.25 eV for LiZnAs, 1.3 eV for LiCdP, and 2.1 eV for LiZnP.Keywords
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