Ambient effects on the diffusion of Cr and Si in thin Pt films
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2), 161-162
- https://doi.org/10.1063/1.91808
Abstract
We have studied the ambient effects on the low‐temperature diffusion of Cr and Si in thin Pt films. The surface‐potential model proposed earlier predicts that, contrary to the case in gold, oxygen should suppress the diffusion of Cr and Si in Pt. We have observed a reduced out‐diffusion of Cr and a reduced rate of Pt2Si formation in the prseence of O2. The technological significance of this effect is also discussed.Keywords
This publication has 4 references indexed in Scilit:
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- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- Low-temperature diffusion of copper through goldJournal of Applied Physics, 1976
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