Characteristics of InGaAs quantum dot infrared photodetectors
- 19 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (21), 3153-3155
- https://doi.org/10.1063/1.122703
Abstract
A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.Keywords
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