REFLECTANCE OF GaAs, GaP, AND THE GaAs1−x Px ALLOYS

Abstract

The reflectance of GaAs, GaP, and the GaAs_1−x P_x alloys has been measured between 2.5 eV and 20 eV at room temperature and between 2.5 eV and 6 eV at liquid-nitrogen temperature. The transitions E₁, E₁ + Δ₁, E_cp, E₀′, E₂, E₁′, E₁′ + Δ₁′, and d₁ have all been observed and their behavior as a function of alloy composition is presented. The data have been used to give a more detailed picture of the band structure of GaAs and GaP and of the way in which the band structure varies with alloying. In particular, the spin-orbit splittings of the valence band are discussed and the relevance of the 2/3 spin-orbit splitting law considered.