Efficient combination of surface and bulk passivation schemes of high-efficiency multicrystalline silicon solar cells
- 1 September 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (5), 3457-3461
- https://doi.org/10.1063/1.359977
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- 640 mV open-circuit voltage multicrystalline silicon solar cells: role of base doping on device parametersSolar Energy Materials and Solar Cells, 1995
- Defect passivation in multicrystalline-Si materials by plasma-enhanced chemical vapor deposition of SiO2/SiN coatingsApplied Physics Letters, 1994
- Boosting the efficiency of solar cells fabricated on electromagnetic cold crucible cast multicrystalline silicon by means of hydrogen passivationSolar Energy Materials and Solar Cells, 1994
- Very low surface recombination velocities on 2.5 Ω cm Si wafers, obtained with low-temperature PECVD of Si-oxide and Si-nitrideSolar Energy Materials and Solar Cells, 1994
- 15.9% efficiency solar cells on electromagnetic cold crucible cast multicrystalline siliconApplied Physics Letters, 1993
- Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma-enhanced chemical vapor depositionApplied Physics Letters, 1993
- Comparison between different schemes for passivation of multicrystalline silicon solar cells by means of hydrogen plasma and front side oxidationApplied Physics Letters, 1993
- Generation of sodium and copper atoms in the gas phase by microwave-induced plasma afterglowsJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Deuterium passivation of grain-boundary dangling bonds in silicon thin filmsApplied Physics Letters, 1982