Rate equation modelling of epitaxial growth
- 2 June 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 216 (3), 557-578
- https://doi.org/10.1016/0039-6028(89)90395-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Monte Carlo simulations of the growth of diamond-structure semiconductors and surface-reflected electron-beam intensities during molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Epitaxial growth of silicon: A molecular-dynamics simulationPhysical Review B, 1987
- Atomistic numerical simulation of epitaxial crystal growthJournal of Vacuum Science & Technology B, 1987
- Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachPhysical Review Letters, 1987
- A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985
- Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulationsSurface Science, 1983
- Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo studyJournal of Vacuum Science & Technology B, 1983
- Simulation models of the crystal–vapor interfaceJournal of Vacuum Science & Technology B, 1983
- Analytical theory of crystal growthThe Journal of Chemical Physics, 1976