Reciprocity behavior of photoresists in excimer laser lithography

Abstract

The effect of high excimer-laser peak powers on the lithographic exposure process is quantitatively examined to investigate the reciprocity behavior of several photoresists. Using the bleaching of an absorption peak as the measure of resist response, it is found that there is no dependence of the resist sensitivity on the peak power of the radiation. Thus the higher UV intensity of excimer lasers can be fully exploited in faster exposures of the resists.