Measurement of the SiH3 Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy
- 1 August 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (8A), L1565
- https://doi.org/10.1143/jjap.27.l1565
Abstract
The SiH3 radical is an important precursor in amorphous silicon thin film formation, but its density in silane plasma has never been measured. In this work, we have developed a method for measuring the SiH3 radical density using an infrared diode laser absorption method and have determined the density in a pulsed SiH4/H2 plasma.Keywords
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