Mechanism of microwave plasma etching of polyimides in O2 and CF4 gas mixtures
- 31 December 1986
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 5 (1-4), 375-386
- https://doi.org/10.1016/0167-9317(86)90066-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Plasma etching of organic materials. I. Polyimide in O2–CF4Journal of Vacuum Science & Technology B, 1985
- Mechanism of oxygen plasma etching of polydimethyl siloxane filmsApplied Physics Letters, 1985
- Decapsulation and Photoresist Stripping in Oxygen Microwave PlasmasJournal of the Electrochemical Society, 1982
- Spectroscopic Studies of Poly[N,N'-bis(phenoxyphenyl)pyromellitimide]. 1. Structures of the Polyimide and Three Model CompoundsMacromolecules, 1980
- Untersuchungen zur Plasmaätzung von Polymeren. Teil I: Strukturänderungen von Polymeren nach PlasmaätzungActa Polymerica, 1979