Edge emission of CuGaSe2
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (9), 4981-4984
- https://doi.org/10.1063/1.328376
Abstract
The edge luminescence of CuGaSe2 is studied on single crystals, from liquid helium temperature to room temperature. Time resolved spectroscopy measurements permit us to describe one of the emission bands in terms of donor‐acceptor pair transitions. Three other emission bands are observed. We attribute them to free‐to‐bound transitions. We determine three impurity levels: 110, 80, and 50 meV. Annealings in different atmospheres permit us to think that the 50‐meV level is due to a cation vacancy acting as an acceptor, and the 80‐meV level to a Se vacancy, which would act as a donor [Migliorato et al., J. Appl. Phys. 46, 1777 (1975)].Keywords
This publication has 12 references indexed in Scilit:
- Photoluminescence Properties of CuGaSe2Grown by Iodine Vapour TransportJapanese Journal of Applied Physics, 1978
- Temperature dependence of the fundamental absorption edge in CuGaSe2Solid State Communications, 1978
- Excitonic Structure of CuGaS2xSe2(1-x)and CuAlS2xSe2(1-x)Japanese Journal of Applied Physics, 1977
- Crystal data for CuGaSe2Journal of Applied Crystallography, 1977
- Electroluminescence in CuGaSe2 single crystalsJournal of Luminescence, 1977
- Preparation and characteristics of CuGaSe2/CdS solar cellsApplied Physics Letters, 1977
- Luminescence in CuGaS2−2xSe2x mixed crystals grown by chemical vapor transportJournal of Physics and Chemistry of Solids, 1977
- Aspects of the band structure of CuGaand CuGaPhysical Review B, 1975
- Inter-impurity recombinations in semiconductorsProgress in Solid State Chemistry, 1973
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965