Stability, superconducting transition temperature, and residual resistivity of amorphous films ofLa100−xAuxalloys

Abstract
Amorphous films of La100xAux alloys with 0x32 and thicknesses from 560 to 2100 Å were formed by vapor condensation on substrates at 4 K. The superconducting transition temperature decreased with increasing Au concentration, varying from 4.6 K for pure La films to 1.6 K for La68 Au32 films. The residual resistivity increased with increasing Au concentration, varying from 63 μΩ cm for pure La films to 208 μΩ cm for La68 Au32 films. The films were annealed to room temperature to determine the stability of the amorphous phase. By a comparison of transition temperatures, residual resistivities, and temperature dependence of the resistance before and after annealing, it was determined that amorphous films containing less than 26 at.% Au crystallized during annealing to room temperature, while films containing 26-32 at.% Au were stable in the amorphous phase at room temperature. The stability and superconducting transition temperatures were compared to those reported for liquid-quenched La100xAux foils. It appears that the amorphous phase in the vapor-condensed films may be more homogeneously disordered than the reported amorphous phase in the liquid-quenched foils.