Comment on correlation effects in hopping conduction
- 1 April 1977
- journal article
- other
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 35 (4), 1133-1136
- https://doi.org/10.1080/14786437708232653
Abstract
Simple qualitative arguments are presented to show the importance of correlated multi-carrier transitions in hopping transport, and to outline the regime where such transitions contribute significantly to the electrical conductivity. Some general features to be expected when such a mechanism operates are presented.Keywords
This publication has 15 references indexed in Scilit:
- Temperature and thickness dependence of low temperature transport in amorphous silicon thin films: A comparison to amorphous germaniumSolid State Communications, 1975
- The Anderson transitionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1975
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Variable-range hopping in a silicon inversion layerPhysics Letters A, 1974
- Thickness Dependence of Hopping Transport in Amorphous-Ge FilmsPhysical Review Letters, 1973
- Electrical conduction in heavily doped germaniumPhilosophical Magazine, 1972
- Correlation effects in hopping conduction: Hopping as a multi-electron transitionJournal of Non-Crystalline Solids, 1972
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968
- Impurity Conduction in Transmutation-Doped-Type GermaniumPhysical Review B, 1960
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958