Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
- 28 June 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 605-608
- https://doi.org/10.1016/s0022-0248(01)00781-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengthsPublished by SPIE-Intl Soc Optical Eng ,1998
- High-performance GaInAsSb thermophotovoltaic devices with an AlGaAsSb windowApplied Physics Letters, 1997
- GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengthsPublished by SPIE-Intl Soc Optical Eng ,1997
- Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm rangePublished by SPIE-Intl Soc Optical Eng ,1996