Thermal oxidation of GaAs
- 15 February 1975
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (4), 180-181
- https://doi.org/10.1063/1.88107
Abstract
Thermal oxidation of GaAs has been carried out at 500 °C in air. Uniform amorphous oxide films as thick as 3.4 μm were grown. This oxide, which adheres well to the substrate and can be etched off in hydrochloric acid, shows promise as a masking oxide for GaAs.Keywords
This publication has 6 references indexed in Scilit:
- High-temperature stability of Au Pt/n-GaAs Schottky barrier diodesSolid-State Electronics, 1974
- Thermal oxidation of gallium arsenideCzechoslovak Journal of Physics, 1968
- The Oxidation of GaP and GaAsJournal of the Electrochemical Society, 1966
- Ellipsometric investigations of oxide films on Ga AsJournal de Physique, 1964
- An Amorphous Modification of Gallium‐Arsenic (V) OxideJournal of the American Ceramic Society, 1963
- Thermal Oxidation of GaAsJournal of the Electrochemical Society, 1962