Deep levels in silicon carbide Schottky diodes
- 24 December 2001
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 187 (3-4), 248-252
- https://doi.org/10.1016/s0169-4332(01)00993-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Epitaxial silicon carbide charge particle detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Deep level centers in silicon carbide: A reviewSemiconductors, 1999
- Chromium in 4H and 6H SiC: Photoluminescence and Zeeman StudiesMaterials Science Forum, 1998
- Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopyphysica status solidi (a), 1997
- Analysis of reverse current–voltage characteristics of Ti/6H–SiC Schottky diodesApplied Physics Letters, 1996
- Nitrogen donors and deep levels in high-quality 4H–SiC epilayers grown by chemical vapor depositionApplied Physics Letters, 1995
- Electrical and optical characterization of SiCPhysica B: Condensed Matter, 1993
- A self consistent approach to IV-measurements on rectifying metal-semiconductor contactsSolid-State Electronics, 1989
- Study of metal-semiconductor interface states using deep level transient spectroscopyApplied Physics A, 1987
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level ParametersJapanese Journal of Applied Physics, 1980