Deep level centers in silicon carbide: A review
- 1 February 1999
- journal article
- review article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 33 (2), 107-130
- https://doi.org/10.1134/1.1187657
Abstract
Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by dopingKeywords
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