Analysis of ion-implanted GaAs by spectroscopic ellipsometry
- 2 December 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 135 (1-3), 353-373
- https://doi.org/10.1016/0039-6028(83)90229-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Multilayer analysis of ion implanted GaAs using spectroscopic ellipsometrySurface and Interface Analysis, 1982
- Depth profiling and interface analysis using spectroscopic ellipsometryJournal of Vacuum Science and Technology, 1982
- Electroreflectance of ion-implanted GaAsJournal of Applied Physics, 1981
- Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eVJournal of the Electrochemical Society, 1981
- Interfacial Reactions in Plasma‐Grown Native Oxide ‐ GaAs StructuresJournal of the Electrochemical Society, 1980
- Characterization of ion-implanted GaAs by ellipsometryJournal of Applied Physics, 1980
- Ion-beam-induced annealing effects in GaAsNuclear Instruments and Methods, 1980
- Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimetersReview of Scientific Instruments, 1978
- Definitions and conventions in ellipsometrySurface Science, 1969
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935