Band-structure dependence of impact ionization rate in GaAs
- 1 April 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (7), 2595-2596
- https://doi.org/10.1063/1.337011
Abstract
The band‐structure dependence of the electron impact ionization rate in GaAs is studied by using local and nonlocal pseudopotential band structures and a Monte Carlo simulation code for the impact ionization rate α. We find that the difference in α for the two band structures reflects mainly the difference in the density of states.Keywords
This publication has 9 references indexed in Scilit:
- Theory of high-field transport of holes in GaAs and InPPhysical Review B, 1984
- Band-structure-dependent transport and impact ionization in GaAsPhysical Review B, 1981
- Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approachSolid-State Electronics, 1979
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Theory of Avalanche Breakdown in InSb and InAsPhysical Review B, 1968
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954