Properties of the yellow luminescence in undoped GaN epitaxial layers
- 15 December 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (23), 16702-16706
- https://doi.org/10.1103/physrevb.52.16702
Abstract
Photoluminescence, time-integrated, time-resolved, and photoluminescence excitation spectroscopy have been employed to study the 2.2 eV (‘‘yellow’’) emission in undoped GaN epitaxial layers. It is best described by a recombination model involving shallow donors and deep donors of probably intrinsic origin. Optically detected magnetic resonance reveals the participation of the shallow donor based on the analysis of the g value and Lorentzian line shape.Keywords
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