The effect of gap state density on the photoconductivity and photoluminescence of a-Si:H
- 30 September 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 31 (9), 677-681
- https://doi.org/10.1016/0038-1098(79)90322-3
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976