A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6), 13-18
- https://doi.org/10.1109/tns.1969.4325498
Abstract
This is the text of a tutorial talk on the use of electron paramagnetic resonance (EPR) as a "microscopic" tool in the study of radiation-produced defects in semiconductors. The basic concepts of EPR and its general applicability to point defects in semiconductors are outlined. As an illustrative example, the study of a p-type (aluminum doped) silicon sample is described from 20.4°K irradiation with 1.5 MeV electrons through various annealing stages. By analysis of the EPR spectra, it is shown that the major defects can be identified and the annealing mechanisms determined.Keywords
This publication has 2 references indexed in Scilit:
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy PairPhysical Review B, 1967
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963