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A 256K dynamic MOS RAM with alpha immune and redundancy
Home
Publications
A 256K dynamic MOS RAM with alpha immune and redundancy
A 256K dynamic MOS RAM with alpha immune and redundancy
MI
M. Ishihara
M. Ishihara
TM
T. Matsumoto
T. Matsumoto
SS
S. Shimizu
S. Shimizu
KM
K. Mitsusada
K. Mitsusada
KS
K. Shimohigashi
K. Shimohigashi
TM
T. Mano
T. Mano
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1 January 1982
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/isscc.1982.1156374
Abstract
No abstract available
Keywords
MOS RAM
REDUNDANCY
ALPHA IMMUNE
256K DYNAMIC MOS
Cited by 17 articles