Active IMPATT Diode Parameters Obtained by Computer Reduction of Experimental Data
- 1 March 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 18 (3), 157-161
- https://doi.org/10.1109/tmtt.1970.1127175
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Characterization and modeling of IMPATT oscillatorsIEEE Transactions on Electron Devices, 1968
- High-efficiency oscillations in germanium avalanche diodes below the transit-time frequencyProceedings of the IEEE, 1968
- High-efficiency CW impatt operationProceedings of the IEEE, 1968
- Varactor diode measurementsRadio and Electronic Engineer, 1966
- Electronic tuning effects in the read microwave avalanche diodeIEEE Transactions on Electron Devices, 1966
- Experimental characterization of a negative-resistance avalanche diodeIEEE Transactions on Electron Devices, 1966
- Determination of Power Losses in Circuits Surrounding Varactor Diodes†International Journal of Electronics, 1965
- A New Microwave Measurement Technique to Characterize Diodes and an 800-Gc Cutoff Frequency Varactor at Zero Volts BiasIEEE Transactions on Microwave Theory and Techniques, 1964
- On the Use of Passive Circuit Measurements for the Adjustment of Variable Capacitance AmplifiersBell System Technical Journal, 1962
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962