High Resolution In Situ XANES Investigation of the Nature of the Passive Film on Iron in a pH 8.4 Borate Buffer

Abstract

Results of chlorine and phosphorus gettering of photovoltaic (PV) polycrystalline silicon are presented. Using surface photovoltage (SPV) diffusion length measurements, it has been established that PV polysilicon is very inhomogeneous and gettering only improves values in regions in which is relatively high and a large amount of nonprecipitated Fe and Cr is present. In regions with low , nonprecipitated Fe and Cr were not detected in as‐grown polysilicon and gettering did not cause any substantial improvement in values. It is conceivable that recombination in these regions is controlled by grown‐in defects.