A kinetic study of the gas-phase thermal decomposition of 1,1-dimethyl-1-silacyclobutane

Abstract

The thermal decomposition of 1,1-dimethyl-1-silacyclobutane has been investigated between 400 and 460°. In this range the reaction is first order and homogeneous. Ethylene and 1,1,3,3-tetramethyl-1,3-disilacyclobutane are the only products. The rate equation is given by k₁(sec.^–1)= 10^{15·80 ± 0·20} exp(–63,800 ± 500/RT). The mechanism of the reaction is interpreted in terms of a reversible initial reaction to give an unstable intermediate containing a silicon–carbon double bond. Some reactions of this intermediate are investigated.