Anomalous penetration of Ga and In implanted in silicon
- 1 July 1968
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 27 (4), 193-194
- https://doi.org/10.1016/0375-9601(68)91085-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-III AND -V ELEMENTS IN Si AND GeApplied Physics Letters, 1967
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- CHANNELING IN GOLDCanadian Journal of Physics, 1967
- ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS—A DIFFUSION EFFECTCanadian Journal of Physics, 1966
- Defect distributions in channeling experimentsNuclear Instruments and Methods, 1965