Heterojunction GaAs/GaAlAs transistors with enhanced gain from avalanche multiplication
- 1 January 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Journal on Solidstate and Electron Devices
- Vol. 1 (2), 53-56
- https://doi.org/10.1049/ij-ssed.1977.0004