First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films
- 8 February 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (6), 062902
- https://doi.org/10.1063/1.3303987
Abstract
We have investigated the dielectric properties of silicon nitride thin films with thickness below 6 nm, by using density functional theory calculations. We find a substantial decrease in the static dielectric constant of crystalline films, as their size is reduced. The variation in the response in proximity of the surface plays a key role in the observed decrease. In addition, amorphization of the films may bring further reduction of both the static and optical dielectric constants.Keywords
This publication has 17 references indexed in Scilit:
- Technology and metrology of new electronic materials and devicesNature Nanotechnology, 2007
- First-principles study of vibrational and dielectric properties ofPhysical Review B, 2006
- High dielectric constant gate oxides for metal oxide Si transistorsReports on Progress in Physics, 2005
- Effects of Nitridation on the Characteristics of Silicon Dioxide: Dielectric and Structural Properties fromab initioCalculationsPhysical Review Letters, 2004
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Ab initiostudy ofandsurfaces in external electric fieldsPhysical Review B, 2001
- Making silicon nitride film a viable gate dielectricIEEE Transactions on Electron Devices, 1998
- Self-consistent theory of electronic states and dielectric response in semiconductorsPhysical Review B, 1986
- Valence-band electronic structure of silicon nitride studied with the use of soft-x-ray emissionPhysical Review B, 1986
- Raman and IR absorption spectroscopic studies on α, β, and amorphous Si3N4Journal of Non-Crystalline Solids, 1981