Detection of Ga vacancies in electron irradiated GaAs by positrons
- 24 March 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (12), 809-810
- https://doi.org/10.1063/1.96677
Abstract
Positron lifetime measurements have been used to study the recovery of electron irradiated GaAs between 77 and 800 K. Below room temperature positrons are trapped by vacancies in Ga sublattices. The Ga vacancies recover between 200 and 350 K.Keywords
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