Charge-carrier transport in poly(n-propylmethylsilane) over a wide temperature range encompassing the glass transition and the melting point
- 1 January 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 61 (1), 59-66
- https://doi.org/10.1080/13642819008208651
Abstract
The hole drift mobility of poly(n-propylmethylsilane) showing thermochromism has been measured over a wide temperature range encompassing its glass transition temperature T g and its melting point T m. The drift mobility obeys Gill's empirical expression for the field and temperature dependences below T g. It levels off near 10-4cm2V-1s-1 with the disappearance of the field dependency above T g, and gradually decreased just below T m, where distinct thermochromism due to the change of the effective o conjugation length in the Si backbone chain was observed. Above T m the mobility increases again in the molten state. The lowering of the drift mobility due to the shortening of the o conjugation length was also observed in rapidly quenched samples which exhibited a mobility about one order of magnitude lower, strongly indicating that the effective o conjugation length in the Si backbone chain determines the charge-carrier transport properties in organopolysilanes.Keywords
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