Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
- 1 November 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (11A), L1612
- https://doi.org/10.1143/jjap.32.l1612
Abstract
We have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers with modulation-doped graded distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD). The threshold current was 3.2 mA. By observing the spontaneous emission through DBRs, we found that transverse mode behavior depends on gain characteristics. Single fundamental transverse-mode lasing is achieved at a negative gain offset and multiple transverse-mode lasing is achieved at a positive gain offset.Keywords
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