The influence of the reaction kinetics of O2 and source flow rates on the uniformity of boron and arsenic diffusions
- 30 April 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (4), 281-288
- https://doi.org/10.1016/0038-1101(71)90070-0
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Precipitates of Phosphorus and of Arsenic in SiliconJournal of the Electrochemical Society, 1966
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961