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Polycrystalline devices in bipolar IC-technology
Home
Publications
Polycrystalline devices in bipolar IC-technology
Polycrystalline devices in bipolar IC-technology
HG
H.C. de Graaff
H.C. de Graaff
JG
J.G. de Groot
J.G. de Groot
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1 January 1980
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1980.189749
Abstract
No abstract available
Keywords
SILICON
THERMIONIC EMISSION
DOPING
DIODES
LOW PRESSURE
GRAIN BOUNDARIES
BORON
GRAIN BOUNDARY
RESISTORS
Cited by 4 articles