Noise and Equivalent Circuit of Double Injection
- 1 December 1968
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 39 (13), 5913-5918
- https://doi.org/10.1063/1.1656089
Abstract
Measurements of the high‐frequency noise of a silicon double‐injection diode result in with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise.
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