Technology development for InSb infrared imagers

1 January 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (1), 170-175
https://doi.org/10.1109/t-ed.1980.19836

Abstract

InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010cm-2. eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D*of a 64- element line array was measured to be 3.4 × 1011cm. Hz1/2. W-1which is 70 percent of that of "background-limited-performance" (BLIP) operation. TheRwas 1 × 10-5V/photon with 10-percent uniformity. The D*andRwere also obtained for a 32 × 32 2D array.

Keywords

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