Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure
- 1 November 1986
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 1 (5), 320-326
- https://doi.org/10.1088/0268-1242/1/5/007
Abstract
The tunnelling transmission probability through a thin (100) GaAs/AlAs/GaAs heterostructure is determined within a many-band pseudopotential model. Elastic inter-valley transfer between the Gamma 1 and X1 valleys, without the emission of phonons, is shown to be a consequence of the model. It is demonstrated that a one-band effective-mass description of the tunnel junction is inadequate due to a significant role played by the X1 minimum of the AlAs.Keywords
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